{"title":"Crystallization study for MgO in magnetic tunnel junction structure","authors":"Yongle Lou, Yu-Ming Zhang, Daqing Xu, Hui Guo, Yimen Zhang, Renxu Jia, Yang Zhao","doi":"10.1109/EDSSC.2011.6117679","DOIUrl":null,"url":null,"abstract":"The growth and crystallization processes of Co<inf>20</inf>Fe<inf>50</inf>B<inf>30</inf>/MgO/Co<inf>20</inf>Fe<inf>50</inf>B<inf>30</inf> magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures is investigated with 2θ x-ray diffraction. A MgO layer with thickness of 1.5nm was grown on an amorphous CoFeB layer, and then was crystallized. By proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
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