D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa
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引用次数: 0
Abstract
We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.
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