Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514334
Namid Stillman, S. Hauert
Nanomedicine, the use of nanoparticles as therapeutic or diagnostic vectors, is expected to be improved through the use of in silico methods which allow for prototype nanoparticle designs to be tested before synthesis and in vitro/in vivo validation. Here, we show that the choice of modelling framework can impact predictions of tissue penetration, focussing specifically on the role of spatial effects for nanoparticles internalised into a cell. We demonstrate that spatial reaction diffusion simulations differ from the well mixed approximation, especially when nanoparticles have large diffusion coefficient and high binding affinity. We expect these results to be of interest to both the in silico community as well as those using these models to optimise nanoparticle designs before real world validation.
{"title":"How Spatiality Impacts In Silico Experiments of Nanoparticle-Cell Interactions","authors":"Namid Stillman, S. Hauert","doi":"10.1109/NANO51122.2021.9514334","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514334","url":null,"abstract":"Nanomedicine, the use of nanoparticles as therapeutic or diagnostic vectors, is expected to be improved through the use of in silico methods which allow for prototype nanoparticle designs to be tested before synthesis and in vitro/in vivo validation. Here, we show that the choice of modelling framework can impact predictions of tissue penetration, focussing specifically on the role of spatial effects for nanoparticles internalised into a cell. We demonstrate that spatial reaction diffusion simulations differ from the well mixed approximation, especially when nanoparticles have large diffusion coefficient and high binding affinity. We expect these results to be of interest to both the in silico community as well as those using these models to optimise nanoparticle designs before real world validation.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"7 1","pages":"279-282"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75217244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514276
B. Kumari, Santhosh Pandranki, Manodipan Sahoo, Rohit Sharma
In this work, Cu-MWCNT composite is recommended as a potential solution to diminish breakdown in copper interconnects caused due to self- heating. Cu-MWCNT composite is less affected by temperature variation as compared to copper interconnect by 33%. To support this deduction, lateral temperature profiles of copper and Cu-MWCNT composite are compared which shows that copper interconnect reaches a higher temperature point due to self-heating as compared to Cu-MWCNT composite interconnect. Delay in Cu-MWCNT composite interconnect turned out to be lesser than copper interconnect. Also, increase in the fraction of MWCNT in Cu-MWCNT composite ($F_{MWCNT}$) leads to decrease in delay. Cu-MWCNT composite with higher $F_{MWCNT}$ experiences lesser Noise Delay Product (NDP) among all the alternatives which makes it most advantageous in terms of signal integrity. NDP of Cu-MWCNT composite interconnects are almost constant with increase in temperature making it immune to thermal effects. MWCNT has the highest reliability in terms of breakdown power ($P_{BD}$) while 1 mm long Cu-MWCNT composite (with $F_{MWCNT}=0.6$) when compared to copper has 61% improvement in breakdown power. Cu-MWCNT composite interconnect is much better than copper interconnect specially for longer wire and higher $F_{MWCNT}$ in terms of $NDP/P_{BD}$ ratio. Our analysis recommends long Cu-MWCNT composite (with $F_{MWCNT}> 0.6$) interconnects to replace copper interconnects as a solution to increased self-heating in copper leading to its breakdown and also improvement in signal integrity aspects.
{"title":"Copper-MWCNT Composite: A Solution to Breakdown in Copper Interconnects","authors":"B. Kumari, Santhosh Pandranki, Manodipan Sahoo, Rohit Sharma","doi":"10.1109/NANO51122.2021.9514276","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514276","url":null,"abstract":"In this work, Cu-MWCNT composite is recommended as a potential solution to diminish breakdown in copper interconnects caused due to self- heating. Cu-MWCNT composite is less affected by temperature variation as compared to copper interconnect by 33%. To support this deduction, lateral temperature profiles of copper and Cu-MWCNT composite are compared which shows that copper interconnect reaches a higher temperature point due to self-heating as compared to Cu-MWCNT composite interconnect. Delay in Cu-MWCNT composite interconnect turned out to be lesser than copper interconnect. Also, increase in the fraction of MWCNT in Cu-MWCNT composite ($F_{MWCNT}$) leads to decrease in delay. Cu-MWCNT composite with higher $F_{MWCNT}$ experiences lesser Noise Delay Product (NDP) among all the alternatives which makes it most advantageous in terms of signal integrity. NDP of Cu-MWCNT composite interconnects are almost constant with increase in temperature making it immune to thermal effects. MWCNT has the highest reliability in terms of breakdown power ($P_{BD}$) while 1 mm long Cu-MWCNT composite (with $F_{MWCNT}=0.6$) when compared to copper has 61% improvement in breakdown power. Cu-MWCNT composite interconnect is much better than copper interconnect specially for longer wire and higher $F_{MWCNT}$ in terms of $NDP/P_{BD}$ ratio. Our analysis recommends long Cu-MWCNT composite (with $F_{MWCNT}> 0.6$) interconnects to replace copper interconnects as a solution to increased self-heating in copper leading to its breakdown and also improvement in signal integrity aspects.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"36 1","pages":"122-125"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72738490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514355
S. Lomov, I. Akhatov, Jeonyoon Lee, B. Wardle, S. Abaimov
The non-linearity of the electrical conductivity with applied voltage is numerically simulated for aligned multi-walled carbon nanotube (A-CNT) nanocomposites. The geometry of the reinforcement is generated based on the morphology of the A-CNT forest experimentally observed by 3D transmission electron microscope computed tomography. The polymer matrix is assumed to be electrically insulative; therefore, DC electrical conductivity is estimated by the current-voltage characteristic of the conducting CNT morphology At different values of voltage, the influence of electrical fields and magnetic fields leads to conformational changes in the nanotube network being the significant factor of the conductivity change for soft materials. The change of the tunneling resistance with the applied voltage are taken into account. The influences of the mentioned factors are comparatively analyzed. Combination of the effects provides the cumulative non-linear dependence for the nanocomposite electrical conductivity. The non-linear effects appear only for very high applied voltage, 1 V/µm and higher; the conformational change effect is felt only if the matrix on the nanocomposite is very soft, such as in foams.
{"title":"Non-Linearity of Electrical Conductivity for Aligned Multi-Walled Carbon Nanotube Nanocomposites: Numerical Estimation of Significance of Influencing Factors","authors":"S. Lomov, I. Akhatov, Jeonyoon Lee, B. Wardle, S. Abaimov","doi":"10.1109/NANO51122.2021.9514355","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514355","url":null,"abstract":"The non-linearity of the electrical conductivity with applied voltage is numerically simulated for aligned multi-walled carbon nanotube (A-CNT) nanocomposites. The geometry of the reinforcement is generated based on the morphology of the A-CNT forest experimentally observed by 3D transmission electron microscope computed tomography. The polymer matrix is assumed to be electrically insulative; therefore, DC electrical conductivity is estimated by the current-voltage characteristic of the conducting CNT morphology At different values of voltage, the influence of electrical fields and magnetic fields leads to conformational changes in the nanotube network being the significant factor of the conductivity change for soft materials. The change of the tunneling resistance with the applied voltage are taken into account. The influences of the mentioned factors are comparatively analyzed. Combination of the effects provides the cumulative non-linear dependence for the nanocomposite electrical conductivity. The non-linear effects appear only for very high applied voltage, 1 V/µm and higher; the conformational change effect is felt only if the matrix on the nanocomposite is very soft, such as in foams.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"4 1","pages":"378-381"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79343509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514335
F. Mousavi, A. Khodadadi, Y. Mortazavi, S. Didarataee
Ni-doped WS2@WO3 heterojunction bifunctional photocatalysts with enhanced adsorption of various WS2:WO3 ratios and Ni contents were synthesized and used for methylene blue removal. (Ni-doped) tungsten oxide was first synthesized by a hydrothermal method and the WS2: WO3 ratio was tuned by its sulfurization/partial oxidation at different temperatures and periods of times. The nanostructured samples were characterized by XRD, BET surface area measurement, FESEM, PL, FTIR spectroscopy, temperature programmed oxidation (TPO), and zeta potential measurement methods. TPO helped finding a mild oxidation temperature of 360°C for the partial oxidation process and also an estimation of sulfide percentage in samples. The optimum ratio of WS2:WO3 of 1: 1.72 was attained at 400°C sulfurization temperature. 8 mol%Ni-doped WS2@WO3 exhibited 99% of MB removal by an integrated photodegradation and adsorption.
{"title":"Ni-doped WS2@WO3 heterojunction for waste-water treatment with enhanced visible-light photocatalytic performance enriched with adsorption","authors":"F. Mousavi, A. Khodadadi, Y. Mortazavi, S. Didarataee","doi":"10.1109/NANO51122.2021.9514335","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514335","url":null,"abstract":"Ni-doped WS2@WO3 heterojunction bifunctional photocatalysts with enhanced adsorption of various WS2:WO3 ratios and Ni contents were synthesized and used for methylene blue removal. (Ni-doped) tungsten oxide was first synthesized by a hydrothermal method and the WS2: WO3 ratio was tuned by its sulfurization/partial oxidation at different temperatures and periods of times. The nanostructured samples were characterized by XRD, BET surface area measurement, FESEM, PL, FTIR spectroscopy, temperature programmed oxidation (TPO), and zeta potential measurement methods. TPO helped finding a mild oxidation temperature of 360°C for the partial oxidation process and also an estimation of sulfide percentage in samples. The optimum ratio of WS2:WO3 of 1: 1.72 was attained at 400°C sulfurization temperature. 8 mol%Ni-doped WS2@WO3 exhibited 99% of MB removal by an integrated photodegradation and adsorption.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"15 1","pages":"348-351"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82782192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514300
Shravanti Joshi
The current global scenario demands more focused mitigation activities and the implementation of stern policies with regards to ever-increasing atmospheric carbon dioxide (CO2) emissions. Over the past few decades, it has caused much concern, thus dramatically driving the ongoing carbon capture, utilization, and sequestration (CCUS) research. Alluring it sounds, but a far easier CO2 utilization alternative is its catalytic conversion to value-added fuels, for which, the use of solar irradiation represents an eventual and economical solution. Hierarchical lead-free all-inorganic halide perovskites are greatly documented for optoelectronics and photovoltaic applications but have rarely been used for CO2 photoreduction. Herein, we report on the synthesis of cesium tin iodide (CsSnI3) and its employability as photocatalysts to convert CO2 gas into value-added hydrocarbon fuels. Under the natural sunlight, artificial solar, and ultraviolet (UV) illumination, the hierarchical CsSnI3 superparticles progressively produced and infused electrons under ambient conditions, thereby catalyzing CO2 reduction to carbon monoxide (CO) at a rate of ~89,~75, and 8 μmol/g with selectivity over 90, 85 and 32%, respectively. The study presented here is foreseen to open many new opportunities towards the utilization of lead-free all-inorganic halide perovskite materials for energy generation through carbon emission utilization.
{"title":"Hierarchical Faceted Cesium Tin Iodide Superparticles for Solar based CO2 Reduction","authors":"Shravanti Joshi","doi":"10.1109/NANO51122.2021.9514300","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514300","url":null,"abstract":"The current global scenario demands more focused mitigation activities and the implementation of stern policies with regards to ever-increasing atmospheric carbon dioxide (CO2) emissions. Over the past few decades, it has caused much concern, thus dramatically driving the ongoing carbon capture, utilization, and sequestration (CCUS) research. Alluring it sounds, but a far easier CO2 utilization alternative is its catalytic conversion to value-added fuels, for which, the use of solar irradiation represents an eventual and economical solution. Hierarchical lead-free all-inorganic halide perovskites are greatly documented for optoelectronics and photovoltaic applications but have rarely been used for CO2 photoreduction. Herein, we report on the synthesis of cesium tin iodide (CsSnI3) and its employability as photocatalysts to convert CO2 gas into value-added hydrocarbon fuels. Under the natural sunlight, artificial solar, and ultraviolet (UV) illumination, the hierarchical CsSnI3 superparticles progressively produced and infused electrons under ambient conditions, thereby catalyzing CO2 reduction to carbon monoxide (CO) at a rate of ~89,~75, and 8 μmol/g with selectivity over 90, 85 and 32%, respectively. The study presented here is foreseen to open many new opportunities towards the utilization of lead-free all-inorganic halide perovskite materials for energy generation through carbon emission utilization.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"44 1","pages":"100-103"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86575267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514288
M. Gorbounov, B. Petrovic, A. Lahiri, S. Soltani
Bioenergy with Carbon Capture and Storage has been regarded as one of the most prominent technologies in the battle against climate change as stated in the latest Intergovernmental Panel on Climate Change reports. However, solid residues generated during the combustion of biomass pose a separate set of environmental and economic challenges that must be addressed. In order to utilise the full potential of this waste stream, an effective nanoporous carbonaceous adsorbent for CO2 capture has been directly prepared via a simple and low-cost extraction technique from industrial-grade biomass combustion bottom ash generated at a UK power plant. The adsorbent characterisation data (via Scanning Electron Microscopy-Energy Dispersive X-ray Spectroscopy as well as Fourier- Transform Infrared Spectroscopy) agrees well with the CO2 adsorption curves obtained through thermogravimetric analysis (TGA). The TGA results have revealed a CO2 adsorption capacity of 0.73 mmol/g at 25°C and 1 atm under a pure CO2 gas stream, thus, proposing a promising and viable route towards in-situ decarbonisation of the biomass combustion sector in the UK via effective waste valorisation.
{"title":"Application of Nanoporous Carbon, Extracted from Biomass Combustion Ash, in CO2 Adsorption","authors":"M. Gorbounov, B. Petrovic, A. Lahiri, S. Soltani","doi":"10.1109/NANO51122.2021.9514288","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514288","url":null,"abstract":"Bioenergy with Carbon Capture and Storage has been regarded as one of the most prominent technologies in the battle against climate change as stated in the latest Intergovernmental Panel on Climate Change reports. However, solid residues generated during the combustion of biomass pose a separate set of environmental and economic challenges that must be addressed. In order to utilise the full potential of this waste stream, an effective nanoporous carbonaceous adsorbent for CO2 capture has been directly prepared via a simple and low-cost extraction technique from industrial-grade biomass combustion bottom ash generated at a UK power plant. The adsorbent characterisation data (via Scanning Electron Microscopy-Energy Dispersive X-ray Spectroscopy as well as Fourier- Transform Infrared Spectroscopy) agrees well with the CO2 adsorption curves obtained through thermogravimetric analysis (TGA). The TGA results have revealed a CO2 adsorption capacity of 0.73 mmol/g at 25°C and 1 atm under a pure CO2 gas stream, thus, proposing a promising and viable route towards in-situ decarbonisation of the biomass combustion sector in the UK via effective waste valorisation.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"48 1","pages":"229-232"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86734533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514291
B. Srinivasu, A. Chattopadhyay
This paper proposes a ternary cycle operator-based PUF in CNFET technology. The PUF is designed using ternary unary operators and mainly uses cycle operators in the ternary logic, hence named as cycle PUF. The proposed PUF is a delay based design using cycle operators $A^{1}$ and $A^{2}$. These operators with their intrinsic addition capability, they provide better randomness. A delay line is designed using cycle operators $A^{1}$ and $A^{2}$. The delay line provides random delay at the output through process variations of the CNT. Monte-Carlo simulations reveal that the proposed PUF is generating 51.2% of 0's and 48.7% of 1's.
在CNFET技术中提出了一种基于三元循环算子的PUF。该PUF采用三元一元算子进行设计，在三元逻辑中主要使用循环算子，因此称为循环PUF。所提出的PUF是一种基于延迟的设计，使用循环算子$ a ^{1}$和$ a ^{2}$。这些算子以其固有的加法能力，提供了更好的随机性。利用循环算子$A^{1}$和$A^{2}$设计了延迟线。延迟线通过碳纳米管的工艺变化在输出端提供随机延迟。蒙特卡罗模拟显示，所提出的PUF产生51.2%的0和48.7%的1。
{"title":"Cycle PUF: A Cycle operator based PUF in Carbon Nanotube FET Technology","authors":"B. Srinivasu, A. Chattopadhyay","doi":"10.1109/NANO51122.2021.9514291","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514291","url":null,"abstract":"This paper proposes a ternary cycle operator-based PUF in CNFET technology. The PUF is designed using ternary unary operators and mainly uses cycle operators in the ternary logic, hence named as cycle PUF. The proposed PUF is a delay based design using cycle operators $A^{1}$ and $A^{2}$. These operators with their intrinsic addition capability, they provide better randomness. A delay line is designed using cycle operators $A^{1}$ and $A^{2}$. The delay line provides random delay at the output through process variations of the CNT. Monte-Carlo simulations reveal that the proposed PUF is generating 51.2% of 0's and 48.7% of 1's.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"8 4","pages":"13-16"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91504478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514329
A. Di Bartolomeo, A. Grillo, A. Pelella, E. Faella, M. Passacantando, N. Martucciello, F. Giubileo
We report a systematic electrical characterization of Mos2 and PdSe2 based FETs, with Ti/Au and Pd/Au contacts respectively, to investigate the effect of electron beam irradiation on the transistor channel current, threshold voltage, and contact resistance. We use a 10 keV electron beam inside a scanning electron microscope to irradiate the channel and/or the contact regions of the transistors and perform in-situ electrical measurements profiting of high precision metallic nanoprobes working as the source and the drain contacts. For Mos2 based devices, we investigate the effect of electron irradiation either on the contact region or on the channel regions. Irradiation of the contact region causes an improvement of the transistor conduction by lowering the contact resistance, which we explain in terms of Schottky barrier reduction at the metal/Moxa interfaces. The irradiation with fluence below 100 e−/nm2 on Mos2 channel region increases the device conductance and shifts the threshold voltage towards more negative voltages. For PdS2 based devices, electron beam irradiation with larger fluence up to 4200 e−/nm2 is detrimental to the conduction properties of the device, causing modification of the conduction from n-type to p-type, likely due to the accumulation of negative charges at the Si/SiO2 interface. Moreover, charge carrier mobility is reduced by the formation of defects both in the PdSe2 nanosheets and at the Si/Si02 interface.
{"title":"Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation","authors":"A. Di Bartolomeo, A. Grillo, A. Pelella, E. Faella, M. Passacantando, N. Martucciello, F. Giubileo","doi":"10.1109/NANO51122.2021.9514329","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514329","url":null,"abstract":"We report a systematic electrical characterization of Mos2 and PdSe2 based FETs, with Ti/Au and Pd/Au contacts respectively, to investigate the effect of electron beam irradiation on the transistor channel current, threshold voltage, and contact resistance. We use a 10 keV electron beam inside a scanning electron microscope to irradiate the channel and/or the contact regions of the transistors and perform in-situ electrical measurements profiting of high precision metallic nanoprobes working as the source and the drain contacts. For Mos2 based devices, we investigate the effect of electron irradiation either on the contact region or on the channel regions. Irradiation of the contact region causes an improvement of the transistor conduction by lowering the contact resistance, which we explain in terms of Schottky barrier reduction at the metal/Moxa interfaces. The irradiation with fluence below 100 e−/nm2 on Mos2 channel region increases the device conductance and shifts the threshold voltage towards more negative voltages. For PdS2 based devices, electron beam irradiation with larger fluence up to 4200 e−/nm2 is detrimental to the conduction properties of the device, causing modification of the conduction from n-type to p-type, likely due to the accumulation of negative charges at the Si/SiO2 interface. Moreover, charge carrier mobility is reduced by the formation of defects both in the PdSe2 nanosheets and at the Si/Si02 interface.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"25 1","pages":"165-168"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79080668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514292
Venkata Ramesh Naganaboina, S. Singh
Nitrogen dioxide (NO2) is one of the most harmful and highly toxic gas, and it is continuously released into the environment from automotive emissions, industrial emissions, and agriculture activities. According to the American Conference of Governmental Industrial Hygienists (ACGIH), the threshold limit value (TLV) of NO2 is up to 3 ppm for 8 h time-weighted average and 5 ppm for 15 min period. Therefore, the efficient detection of low concentration of NO2 gas is significant for monitoring human health in the near above-mentioned sources. In this aspect, transition metal dichalcogenides (TMDs) based gas sensor holds a promising potential for detecting the toxic gas due to their inherent properties such as, high surface to volume ratio and small intrinsic dimension. Among TMDs, tin disulfide (SnS2) has become a promising sensing material in gas sensing applications, owing to its physical affinity, planar crystal structure, and high specific surface area. Herein, SnS2 was synthesized by hydrothermal method and characterized by X-ray diffraction (XRD) and Raman spectroscopy. Subsequently, the chemiresistive gas sensor was fabricated by depositing SnS2 on the glass substrate which has gold (Au) interdigitated electrode pattern. The fabricated sensor was explored for detecting various gases such as CO, CO2, SO2, NH3, and NO2 at different temperatures (27°C, 60°C, 100°C, 150°C, 200°C, and 250°C) and a maximum response of 24.5% was obtained for 6 ppm NO2 gas at a temperature of 100°C, which demonstrates that the sensor is a highly selective among the other gases. Furthermore, the sensor was utilized to detect the range of NO2 concentrations from 1.5 ppm to 6 ppm at an optimum temperature of 100°C and the results revealed that the experimental detection limit is 1.5 ppm, and the response of the sensor was also observed to be a power law behavior. In addition, the plausible sensing mechanism was explored by use of surface charge transfer to NO2 gas and energy barrier modulation at the surface of SnS2.
{"title":"Fabrication of highly selective NO2 gas sensor for low ppm detection","authors":"Venkata Ramesh Naganaboina, S. Singh","doi":"10.1109/NANO51122.2021.9514292","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514292","url":null,"abstract":"Nitrogen dioxide (NO2) is one of the most harmful and highly toxic gas, and it is continuously released into the environment from automotive emissions, industrial emissions, and agriculture activities. According to the American Conference of Governmental Industrial Hygienists (ACGIH), the threshold limit value (TLV) of NO2 is up to 3 ppm for 8 h time-weighted average and 5 ppm for 15 min period. Therefore, the efficient detection of low concentration of NO2 gas is significant for monitoring human health in the near above-mentioned sources. In this aspect, transition metal dichalcogenides (TMDs) based gas sensor holds a promising potential for detecting the toxic gas due to their inherent properties such as, high surface to volume ratio and small intrinsic dimension. Among TMDs, tin disulfide (SnS2) has become a promising sensing material in gas sensing applications, owing to its physical affinity, planar crystal structure, and high specific surface area. Herein, SnS2 was synthesized by hydrothermal method and characterized by X-ray diffraction (XRD) and Raman spectroscopy. Subsequently, the chemiresistive gas sensor was fabricated by depositing SnS2 on the glass substrate which has gold (Au) interdigitated electrode pattern. The fabricated sensor was explored for detecting various gases such as CO, CO2, SO2, NH3, and NO2 at different temperatures (27°C, 60°C, 100°C, 150°C, 200°C, and 250°C) and a maximum response of 24.5% was obtained for 6 ppm NO2 gas at a temperature of 100°C, which demonstrates that the sensor is a highly selective among the other gases. Furthermore, the sensor was utilized to detect the range of NO2 concentrations from 1.5 ppm to 6 ppm at an optimum temperature of 100°C and the results revealed that the experimental detection limit is 1.5 ppm, and the response of the sensor was also observed to be a power law behavior. In addition, the plausible sensing mechanism was explored by use of surface charge transfer to NO2 gas and energy barrier modulation at the surface of SnS2.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"9 1","pages":"42-45"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75034341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514338
Gyeong Min Seo, C. Baek, B. Kong
We propose deep neural networks to uncover the relationship between the gate shape and the electrical response of graphene field effect transistors. A deep neural network is used to efficiently optimize a transport gap for a graphene field effect transistor that utilizes the pseudo-optic negative reflection at a p-n junction. Using the finite-difference-time-domain method for massless Dirac fermions, the electrical responses of graphene field effect transistors with arbitrary gate shapes were calculated, and the results were used to train a deep neural network. It turns out that the trained deep neural network was not only able to foresee the graphene pseudo-optic response for a specific gate shape but also to provide an optimized design for a desired electrical response by the inverse design.
{"title":"Inverse Design of Graphene FET by Deep Neural Network","authors":"Gyeong Min Seo, C. Baek, B. Kong","doi":"10.1109/NANO51122.2021.9514338","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514338","url":null,"abstract":"We propose deep neural networks to uncover the relationship between the gate shape and the electrical response of graphene field effect transistors. A deep neural network is used to efficiently optimize a transport gap for a graphene field effect transistor that utilizes the pseudo-optic negative reflection at a p-n junction. Using the finite-difference-time-domain method for massless Dirac fermions, the electrical responses of graphene field effect transistors with arbitrary gate shapes were calculated, and the results were used to train a deep neural network. It turns out that the trained deep neural network was not only able to foresee the graphene pseudo-optic response for a specific gate shape but also to provide an optimized design for a desired electrical response by the inverse design.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"6 1","pages":"134-137"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78284704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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