High-performance VOx-based memristors with ultralow switching voltages prepared at room temperature

M.Y. Wang, D. Wang, X.D. Huang
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Abstract

In this work, the Ti/VOx/ITO memristors fabricated at room temperature with self-current compliance characteristics are demonstrated. The devices exhibited excellent resistive switching behavior with ultralow programming voltages (as low as 17 mV) and good retention time (>104 s). In addition, low-power characteristic with 36.72 nW set power (2.16 µA@17 mV) and 2.74 µW reset power (17.1 µA@0.16 V) were obtained in these memristive devices, which makes them promising in the next-generation information storage and computing applications.
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室温下制备的超低开关电压的高性能vox基忆阻器
在这项工作中,展示了室温下制备的具有自电流顺应特性的Ti/VOx/ITO忆阻器。该器件具有优异的电阻开关性能,编程电压低至17 mV,保持时间>104 s,并且具有36.72 nW定值功率(2.16 μ A@17 mV)和2.74 μ W复位功率(17.1 μ A@0.16 V)的低功耗特性,在下一代信息存储和计算应用中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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