{"title":"Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa","authors":"M. Basov","doi":"10.36227/TECHRXIV.14891658.V1","DOIUrl":null,"url":null,"abstract":"The theoretical model and experimental characteristics of ultra-high\nsensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a\nnovel electrical circuit are presented. The electrical circuit uses\npiezosensitive differential amplifier with negative feedback loop (PDA-NFL)\nbased on two bipolar-junction transistors (BJT). The BJT has a vertical\nstructure of n-p-n type (V-NPN) formed on a non-deformable chip area. The\ncircuit contains eight piezoresistors located on a profiled membrane in the\nareas of maximum mechanical stresses. The circuit design provides a balance\nbetween high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low\ntemperature dependence of zero output signal (TCZ = 0.094% FS/°C).\nAdditionally, high membrane burst pressure of P = 550 kPa was reached.","PeriodicalId":23650,"journal":{"name":"viXra","volume":"181 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"viXra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.36227/TECHRXIV.14891658.V1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The theoretical model and experimental characteristics of ultra-high
sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a
novel electrical circuit are presented. The electrical circuit uses
piezosensitive differential amplifier with negative feedback loop (PDA-NFL)
based on two bipolar-junction transistors (BJT). The BJT has a vertical
structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The
circuit contains eight piezoresistors located on a profiled membrane in the
areas of maximum mechanical stresses. The circuit design provides a balance
between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low
temperature dependence of zero output signal (TCZ = 0.094% FS/°C).
Additionally, high membrane burst pressure of P = 550 kPa was reached.
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