{"title":"Modeling of sensitive element for pressure sensor based on bipolar piezotransistor","authors":"Mikhail Basov, D. Prigodskiy","doi":"10.21203/RS.3.RS-677127/V1","DOIUrl":null,"url":null,"abstract":"\n The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.","PeriodicalId":23650,"journal":{"name":"viXra","volume":"16 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"viXra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21203/RS.3.RS-677127/V1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.
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