Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

viXra Pub Date : 2021-07-01 DOI:10.21203/rs.3.rs-658941/v1
M. Basov, D. Prigodskiy
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Abstract

The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.
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-0.5…+0.5 kPa高灵敏度压阻式压力传感器的研究
针对在超低压差范围内工作的压力传感器芯片的设计进行了研究。利用现有的技术资源确定了膜的最佳几何形状。该压力传感器芯片面积为6.15х6.15 mm,在非线性2KNL = 0.81% FS时,平均灵敏度S为34.5 mV/кPa/V,热滞后高达0.6% FS。由于芯片与停止元件连接,破裂压力达到450 кPa。
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