H. Sanda, J. Mcvittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi
{"title":"Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer","authors":"H. Sanda, J. Mcvittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi","doi":"10.1109/IEDM.2005.1609442","DOIUrl":null,"url":null,"abstract":"To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"16 1","pages":"679-682"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
