Effect of nitrogen doping on microdefects and minority charge carrier lifetime of high-purity, dislocation-free and multicrystalline silicon

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520195

T. Ciszek, T. Wang, R. Burrows, T. Bekkadahl, M. Symko, J. Webb

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引用次数: 9

Abstract

We studied the effects of Si growth in atmospheres containing N/sub 2/ on minority charge carrier lifetime /spl tau/ using a high-purity, induction-heated, float-zone (FZ) crystal growth method. Ingots were grown in ambients that ranged from pure argon (99.9995%) to pure N/sub 2/ (99.999%). /spl tau/ was measured as a function of position along the ingots using the ASTM F28-75 photoconductive decay (PCD) method. We found that Ga-doped, multicrystalline silicon ingot growth in a partial or total nitrogen ambient has a negligible effect on minority charge carrier lifetime and no significant grain boundary passivation effect. Values of 40 /spl mu/s

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氮掺杂对高纯无位错多晶硅微缺陷和少数载流子寿命的影响

我们采用高纯度、感应加热、浮区(FZ)晶体生长方法研究了Si在含N/sub /气氛中生长对少数载流子寿命(spl tau/)的影响。锭的生长环境从纯氩(99.9995%)到纯N/sub /(99.999%)不等。使用ASTM F28-75光导衰减(PCD)方法测量/spl tau/作为沿铸锭位置的函数。我们发现，在部分或全氮环境下，掺ga的多晶硅锭生长对少数载流子寿命的影响可以忽略不计，并且没有明显的晶界钝化效应。无论环境如何，典型值为40 /spl mu/s

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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