B. Vianne, A. Crocherie, S. Guissi, Danielle Sieger, S. Calderón, D. Rideau, H. Wehbe-Alause
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引用次数: 0
Abstract
This paper describes an innovative methodology to investigate the relationship between device morphology and the optical performance of CMOS image sensors. By coupling a FDTD-based 3D Maxwell solver with silicon-accurate process modeling software, we have been able to analyze the sensitivity of image sensor quantum efficiency with respect to statistical variations in nm-scale device topology. Additionally, we studied pyramidal silicon structuration for quantum efficiency enhancement as proposed in [1].
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