Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu
{"title":"3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects","authors":"Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu","doi":"10.1109/SISPAD.2019.8870540","DOIUrl":null,"url":null,"abstract":"A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.
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