Vicky O’Donovan, Shay Whiston, A. Deignan, C. N. Chléirigh
{"title":"Hot carrier reliability of lateral DMOS transistors","authors":"Vicky O’Donovan, Shay Whiston, A. Deignan, C. N. Chléirigh","doi":"10.1109/RELPHY.2000.843910","DOIUrl":null,"url":null,"abstract":"The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"67 1","pages":"174-179"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843910","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS.
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