{"title":"Keynote Address 1: \"Transistors and reliability in the innovation era\"","authors":"K. Mistry","doi":"10.1109/IRPS.2015.7112656","DOIUrl":null,"url":null,"abstract":"Traditional transistor scaling drive the semiconductor industry through the 1990s, but led to the era of innovation driven transistor scaling. Strained silicon, high-k plus metal gate transistors, and fin based transistors were some of the key innovations in the last several process technology generations. This presentation will explore both the transistor scaling benefits from these innovations as well as the reliability implications covering the 90nm to 14nm timeframe.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2015.7112656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Traditional transistor scaling drive the semiconductor industry through the 1990s, but led to the era of innovation driven transistor scaling. Strained silicon, high-k plus metal gate transistors, and fin based transistors were some of the key innovations in the last several process technology generations. This presentation will explore both the transistor scaling benefits from these innovations as well as the reliability implications covering the 90nm to 14nm timeframe.