K. Fong, T. Kho, Wensheng Liang, T. Chong, M. Ernst, D. Walter, M. Stocks, E. Franklin, K. McIntosh, A. Blakers
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引用次数: 1
Abstract
This work presents the investigation of low pressure in-situ thermal oxidation as the interfacial oxide for n+ polysilicon-oxide passivated contact structure, achieving excellent surface passivation below 1 fA·cm-2 and contact resistivity below 1 mΩ·cm2. The results from the process optimisation are presented in detail, showing the importance of accurate control of oxidation conditions, and presenting the correlation to the electrical properties. Additionally, a method of fabricating contact resistivity structures from symmetrical photoconductance decay lifetime samples, and the extraction of the specific contact resistivity using 3D numerical simulation is presented.
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