Preparation of CuInSe/sub 2/ thin films using electrodeposited In/Cu metallic layer

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.519843

Yirop Kim, Y. Lee, H. Kim, Jinsoo Song

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Abstract

CuInSe/sub 2/ thin films were prepared by a two-stage process: electrodeposition of In/Cu metallic layer and selenization. Effects of current density in In electrodeposition on properties of In/Cu metallic layer and those of CuInSe/sub 2/ thin films were investigated. For lower current densities, In/Cu metallic layer had rough surface with formation of droplets, but smooth surfaces appeared for higher current densities. The compositional nonuniformity became severe for lower current densities, and the amount of loss of indium during the selenization decreased with increasing of current density. It was found that the compositional nonuniformity in the In/Cu metallic layer was caused by formation of droplets and was dependent on the composition nonuniformity in In/Cu metallic layers. Thus, in the case of the highest current density of 80 mA/cm/sup 2/, homogeneous CuInSe/sub 2/ thin films without second phases were prepared. The (112) preferred orientation of CuInSe/sub 2/ thin films was influenced by its composition.

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电沉积In/Cu金属层制备CuInSe/ sub2 /薄膜

采用电沉积In/Cu金属层和硒化两步法制备了CuInSe/sub 2/薄膜。研究了in电沉积中电流密度对in /Cu金属层和CuInSe/sub 2/薄膜性能的影响。当电流密度较低时，In/Cu金属层表面粗糙，形成液滴，而当电流密度较大时，表面光滑。随着电流密度的增大，硒化过程中铟的损失量减小。发现in /Cu金属层的成分不均匀性是由液滴的形成引起的，并且取决于in /Cu金属层的成分不均匀性。因此，在最高电流密度为80 mA/cm/sup 2/的情况下，制备了无第二相的均匀CuInSe/sub 2/薄膜。CuInSe/ sub2 /薄膜的(112)择优取向受其组成的影响。

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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