{"title":"A 10Gb/s, 342fJ/bit micro-ring modulator transmitter with switched-capacitor pre-emphasis and monolithic temperature sensor in 65nm CMOS","authors":"S. Saeedi, A. Emami-Neyestanak","doi":"10.1109/VLSIC.2016.7573541","DOIUrl":null,"url":null,"abstract":"In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.