Gai Liu, G. Du, Tiao Lu, Xiaoyan Liu, Pingwen Zhang, Xing Zhang
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引用次数: 0
Abstract
Quasi-ballistic asymmetric DG-MOSFET has been simulated using a multi-subband Boltzmann transport equation solver and important parameters regarding to back-scattering at the top of barrier are carefully studied in this work. It is observed that the simulated results are in good agreement with established theory and phonon scattering still plays an important role in limiting the performance of MOSFET even when gate length is scaled down to sub-10nm.
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