Yoocheol Shin, Jungdal Choi, Chang-seok Kang, Changhyun Lee, Ki-Tae Park, Jang‐Sik Lee, Jongsun Sel, V. Kim, Byeongin Choi, J. Sim, Dongchan Kim, Hag-ju Cho, Kinam Kim
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引用次数: 65
Abstract
A NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and peripheral circuits. In this study, optimized TANOS (TaN-Al2O 3-nitride-oxide- silicon) cells integrated using 63nm NAND flash technology showed high performance compatible to floating-gate (FG) cell. The newly-developed TANOS-NAND flash technology proved to be a promising candidate to replace FG memory beyond 50nm technology
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