J. González, V. Puyal, A. Siligaris, C. Jany, C. Dehos
{"title":"A 45GHz/55GHz LO frequency selector for E-band transceivers based on switchable injection locked-oscillators in BiCMOS 55nm","authors":"J. González, V. Puyal, A. Siligaris, C. Jany, C. Dehos","doi":"10.1109/ESSCIRC.2015.7313843","DOIUrl":null,"url":null,"abstract":"This work presents a mmW frequency selector as the core of the LO generator for E-band transceivers. Two 10 GHz apart mmW LO frequencies generated by a mixer from a single 50 GHz frequency and its 5 GHz submultiple are sent to the proposed circuit that outputs a single frequency tone of either 45 GHz or 55 GHz. The circuit is realized in BiCMOS 55nm technology combining 55nm CMOS transistors and SiGe HBTs with fT and fmax ~300 GHz. The circuit is based on injection-locked oscillators, presents a phase noise @ 1MHz offset of -110 dBc/Hz with 0 dB of excess phase noise added to the input, and consumes 53mW.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2015.7313843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a mmW frequency selector as the core of the LO generator for E-band transceivers. Two 10 GHz apart mmW LO frequencies generated by a mixer from a single 50 GHz frequency and its 5 GHz submultiple are sent to the proposed circuit that outputs a single frequency tone of either 45 GHz or 55 GHz. The circuit is realized in BiCMOS 55nm technology combining 55nm CMOS transistors and SiGe HBTs with fT and fmax ~300 GHz. The circuit is based on injection-locked oscillators, presents a phase noise @ 1MHz offset of -110 dBc/Hz with 0 dB of excess phase noise added to the input, and consumes 53mW.