Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs

Abstract

The stability of the threshold voltage of commercial SiC MOSFETs from two device manufactures has been evaluated and compared when subject to positive and negative bias-temperature-stress conditions. For both device groupings, the worse-case stress occurred under negative bias temperature conditions with VGS = –15 V and a stress temperature of 200 °C. Devices in the Vendor A grouping exhibited acceleration in their bias-temperature-stress response that occurred earlier in time as a strong function of stress-temperature and to a lesser degree on gate-bias magnitude. Devices in the Vendor B grouping showed some evidence of acceleration, but only for the worse-case stress condition. Threshold voltage shifts for this device group were very low and extremely stable, with recorded values below 0.4 V for most conditions.