R. Mears, N. Xu, N. Damrongplasit, H. Takeuchi, R. Stephenson, N. Cody, A. Yiptong, X. Huang, M. Hytha, Tsu-Jae King-Liu
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引用次数: 11
Abstract
We demonstrate simultaneous NMOS and PMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.
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