B. Bhushan, Minrui Yu, J. Dukovic, L. Wong, Aksel Kitowski, Mun Kvu Park, J. Hua, Shwetha Bolagond, A. Chan, C. Toh, A. Sundarrajan, Niranjan Kumar, S. Ramaswami
{"title":"Fabrication and electrical characterization of 5×50um through silicon vias for 3D integration","authors":"B. Bhushan, Minrui Yu, J. Dukovic, L. Wong, Aksel Kitowski, Mun Kvu Park, J. Hua, Shwetha Bolagond, A. Chan, C. Toh, A. Sundarrajan, Niranjan Kumar, S. Ramaswami","doi":"10.1109/IITC.2013.6615579","DOIUrl":null,"url":null,"abstract":"We present fabrication, electrical characterization, and metrology analysis results of 5×50um TSVs for 3D integration. Specifically, electrical performance of blind TSVs is evaluated by capacitance-voltage (CV) and current-voltage (IV) measurements. Important electrical parameters such as oxide capacitance, minimum TSV capacitance, leakage current, and breakdown voltage are extracted and show good results. The capacitance values also closely match model predictions. The electrical testing data are further verified with a variety of materials analysis techniques.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"90 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
We present fabrication, electrical characterization, and metrology analysis results of 5×50um TSVs for 3D integration. Specifically, electrical performance of blind TSVs is evaluated by capacitance-voltage (CV) and current-voltage (IV) measurements. Important electrical parameters such as oxide capacitance, minimum TSV capacitance, leakage current, and breakdown voltage are extracted and show good results. The capacitance values also closely match model predictions. The electrical testing data are further verified with a variety of materials analysis techniques.
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