Characteristics of Metal/Ferroelectric (PVDF-TrFE)/Graphene (MFG) device

H. Hwang, E. J. Paek, J. H. Yang, C. Kang, B. H. Lee
{"title":"Characteristics of Metal/Ferroelectric (PVDF-TrFE)/Graphene (MFG) device","authors":"H. Hwang, E. J. Paek, J. H. Yang, C. Kang, B. H. Lee","doi":"10.1109/SNW.2012.6243335","DOIUrl":null,"url":null,"abstract":"Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.
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金属/铁电(PVDF-TrFE)/石墨烯(MFG)器件的特性
介绍了新型金属/铁电(PVDF-TrFE)/石墨烯(MFG)堆叠可重构石墨烯器件的特点。主要特点包括编程速度<;100nsec,保持时间长达1000秒,续航时间长达1000次,开/关比超过775%。虽然本文主要介绍内存类功能,但MFG器件具有许多广泛的应用,如可重构互连电阻或逻辑器件,压敏触摸传感器等。
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