Kai Liu, Hung-Chih Chin, H. Lou, Kuan‐Chang Chang, Xinnan Lin
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引用次数: 0
Abstract
In this work, the fluctuations of the electrical characteristics including ON -current, OFF -current, subthreshold swing and threshold voltage, due to line edge roughness (LER) for double-gate charge-plasma junctionless transistor (CPJLT) and side-wall charge-plasma junctionless transistor (S-CPJLT) are explored. Results shows that S-CPJLT has less fluctuations in ON -current while maintaining similar performance of other electrical characteristics. Besides, S-CPJLT has larger ON-current, smaller OFF-current on average. This work indicates that S-CPJLT has greater potential in electronic device development.
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