G. Meinhardt, J. Kraft, B. Loffler, H. Enichlmair, G. Rohrer, E. Wachmann, M. Schrems, R. Swoboda, C. Seidl, H. Zimmermann
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引用次数: 6
Abstract
A monolithically integrated photodiode with SiGe:C anode, which exhibits an excellent spectral responsivity of typically 0.21/0.42/0.53 A/W at 410/660/785nm and sub-ns rise/fall times, fabricated without process modification is presented. The bandwidth of the photodiode exceeds 1300/490/260MHz at 410/660/785nm favoring this device for universal optical storage applications. By applying a reverse bias voltage up to 10 V the photodiode features responsivities up to 0.6 A/W for 410nm due to avalanche multiplication
提出了一种采用SiGe:C阳极的单片集成光电二极管，在410/660/785nm和sub-ns的上升/下降时间下，具有0.21/0.42/0.53 A/W的优异光谱响应率。该光电二极管在410/660/785nm处的带宽超过1300/490/260MHz，有利于该器件的通用光存储应用。通过施加反向偏置电压高达10 V，光电二极管具有响应高达0.6 a /W的410nm由于雪崩倍增
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