{"title":"TCAD analysis of FinFET temperature-dependent variability for analog applications","authors":"S. Guerrieri, F. Bonani, G. Ghione","doi":"10.1109/SISPAD.2019.8870492","DOIUrl":null,"url":null,"abstract":"The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"95 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.
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