{"title":"Single-electron transport through a single donor at elevated temperatures","authors":"E. Hamid, D. Moraru, T. Mizuno, M. Tabe","doi":"10.1109/SNW.2012.6243293","DOIUrl":null,"url":null,"abstract":"We showed that, in nanoscale doped SOIFETs, new current peaks become observable as temperature is increased. For smallest 1-disk devices, a final new tunneling current peak has been observed even at T = 100 K, indicating that such patterned-channel devices are suitable for high temperature tunneling operation. Ionization energy was estimated to be about 5 times larger than for bulk Si, due to dielectric and confinement effect.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We showed that, in nanoscale doped SOIFETs, new current peaks become observable as temperature is increased. For smallest 1-disk devices, a final new tunneling current peak has been observed even at T = 100 K, indicating that such patterned-channel devices are suitable for high temperature tunneling operation. Ionization energy was estimated to be about 5 times larger than for bulk Si, due to dielectric and confinement effect.
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