{"title":"A Stochastic Hole Trapping-Detrapping Framework for NBTI, TDDS and RTN","authors":"S. Bhagdikar, S. Mahapatra","doi":"10.1109/SISPAD.2019.8870524","DOIUrl":null,"url":null,"abstract":"A stochastic framework is presented to model hole trapping and detrapping into and out of individual defects that are present in the gate dielectric of a p-channel MOS transistor. The model calculates thermionic reactions between uncharged and charged states of a defect that are separated by an energy barrier, by using the Gillespie Stochastic Simulation Algorithm (GSSA). The model is validated using experimental data from small area devices under Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) studies.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A stochastic framework is presented to model hole trapping and detrapping into and out of individual defects that are present in the gate dielectric of a p-channel MOS transistor. The model calculates thermionic reactions between uncharged and charged states of a defect that are separated by an energy barrier, by using the Gillespie Stochastic Simulation Algorithm (GSSA). The model is validated using experimental data from small area devices under Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) studies.
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