High performance single grain si tfts inside a location-controlled grain by /spl mu/-czochralski process with capping layer

Abstract

To enlarge the grain size of 2D location-controlled Si grain by mu-Czochralski process, capping layer (C/L) of SiO₂ in excimer-laser crystallization of amorphous Si thin film has been employed. With a 50 nm thick SiO₂ C/L on a 100 nm thick amorphous Si film, the diameter of the location-controlled grain was successfully increased up to 7.5 mum. Single-grain (SG) Si TFTs were fabricated inside a location-controlled grain with the SiO₂ C/L as a part of the gate oxide. Field effect mobility (mu_FE) for electrons and holes of 510 cm²/Vs and of 210 cm²/Vs were obtained respectively