Sunghun Jung, Jeong-Hoon Oh, K. Ryoo, Sungjun Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
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引用次数: 0
Abstract
By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO2), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO2/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.
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