Microwave manipulation of electrons in silicon quantum dots

Abstract

Here we present the results of an investigation on microwave-induced effects that we have observed in silicon devices, including phosphorous doped and Metal-Oxide-Semiconductor Single Electron Transistors (SET) as well as IDQD. Continuous pulsed microwave and single shot measurements are used to demonstrate that photons in the range of 10-15 GHz allow manipulation of the electron number in the island of a doped SET, despite the high value for the charging energy and in a regime where photon assisted tunnelling is not observable. The method is applied to a device made of a SET with a capacitively coupled IDQD. Partial control of the qubit is obtained and results in the possibility of manipulating charge states in an isolated structure with GHz photons.