Research on Vacuum Soldering Technology of Military IGBT Module

Tao Chen, Jun Zhang, Jing-ming Fei, Bin-bin Zhang, Xiaofeng Sun, Nana Rong
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引用次数: 1

Abstract

Insulated Gate Bipolar Transistor (IGBT)module is the core device of power electronics which integrates Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Giant Transistor(GTR)together. It has fast switching speed, reduced saturation voltage, soft-off characteristics and short-circuit resistance. IGBT has been widely used in industrial, aerospace, defense and military industries and rail transit, smart grid and new energy vehicles. As the power density of IGBTs continues to increase, the reliability requirements for IGBT packages are becoming higher and higher, and any failure may cause paralysis of the entire system. The soldering process of the MOSFET and GTR and the substrate is important to the IGBT module packaging. A high quality soldering process can reduce the interface thermal resistance and increase the welding strength and the long-term reliablility. The defects of the solder layer may lead to the increasing of the interface thermal resistance and reducing the product life. At the same time, the defective solder layer will easily cause fatigue failure such as solder layer peeling, chip and substrate crack under the action of ambient temperature cycle and power cycle.This paper is mainly studying the vacuumsoldering process of IGBT module .Using the vacuum soldering process with solder pre-form and formic acid, the low-cavity soldering layer can be achieved. Through material pretreatment, tooling fixture and solder selection, the precise positioning of two sintering and chip, DBC (Direct Bonding Copper) substrate and copper substrate is solved. The control of temperature curve in different temperature zones is optimized, and the vacuum in the soldering process is ensured. Temperature, vacuum rate, vacuum holding time control accuracy, while systematic research on formic acid concentration, activation time, activation temperature control, etc., and non-wetting, soldering, solder overflow, chip substrate Evasion methods such as offset and hole exceeding the standard are proposed. Finally, the high strength, low void rate and position consistency of the soldering interface are realized through the visual inspection, X-ray photography and shear force test to which are shown that the IGBT soldering process has high reliability. (Abstract)
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军用IGBT模块真空焊接技术研究
绝缘栅双极晶体管(IGBT)模块是将金属氧化物半导体场效应晶体管(MOSFET)和巨型晶体管(GTR)集成在一起的电力电子器件的核心器件。它具有开关速度快、饱和电压低、软关断特性和抗短路性能。IGBT已广泛应用于工业、航空航天、国防军工以及轨道交通、智能电网、新能源汽车等领域。随着IGBT功率密度的不断提高,对IGBT封装的可靠性要求越来越高,任何一个故障都可能导致整个系统瘫痪。MOSFET、GTR和基板的焊接工艺对IGBT模块封装非常重要。高质量的焊接工艺可以降低界面热阻,提高焊接强度和长期可靠性。焊料层的缺陷会导致界面热阻增大,降低产品寿命。同时,有缺陷的焊料层在环境温度循环和功率循环的作用下,容易造成焊料层剥落、芯片和衬底裂纹等疲劳失效。本文主要研究了IGBT模块的真空焊接工艺,采用焊料预成型和甲酸的真空焊接工艺,实现了低空腔的焊接层。通过材料预处理、工装夹具和焊料选择,解决了烧结和贴片、DBC (Direct Bonding Copper)基板和铜基板的精确定位问题。优化了不同温度区域的温度曲线控制,保证了焊接过程中的真空。温度、真空度、真空保持时间控制精度,同时系统研究甲酸浓度、活化时间、活化温度控制等,并提出了不润湿、焊接、焊料溢出、芯片衬底漏泄等偏移和孔超标等方法。最后,通过目测、x射线照相和剪切力测试,实现了焊接界面的高强度、低空穴率和位置一致性,表明IGBT焊接工艺具有较高的可靠性。(抽象)
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