Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245821
Xiang Sun, K. Liang, Fang Dong, Zhen Wang, Sheng Liu
Using first-principles calculation within density functional theory, the adsorption properties of gas (CO2, CO, H2O, NH3) – SiGe monolayer systems are chosen to investigate and the most sensitive gas and adsorption site (Si site for CO2, Center site for CO, Ge site for NH3, and Ge site for H2O ) are discovered. The adsorption energy, band gap, and charge transfer are all considered. Through research, the results indicate that SiGe is most sensitive to NH3 while H2O also show an impressive adsorption property. NH3 adsorption possess large adsorption energy that is suitable to be used as sensing material in gas device. And the physical adsorption model is determined through considering adsorption distance, adsorption energy, and Charge density difference (CDD) plot, moreover, the physical adsorption is profited to the application of gas sensor. Our theoretical results indicates that monolayer SiGe is a promising candidate for gas sensing applications.
{"title":"First-principle study of gas adsorption on SiGe monolayer as sensor applications","authors":"Xiang Sun, K. Liang, Fang Dong, Zhen Wang, Sheng Liu","doi":"10.1109/ICEPT47577.2019.245821","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245821","url":null,"abstract":"Using first-principles calculation within density functional theory, the adsorption properties of gas (CO2, CO, H2O, NH3) – SiGe monolayer systems are chosen to investigate and the most sensitive gas and adsorption site (Si site for CO2, Center site for CO, Ge site for NH3, and Ge site for H2O ) are discovered. The adsorption energy, band gap, and charge transfer are all considered. Through research, the results indicate that SiGe is most sensitive to NH3 while H2O also show an impressive adsorption property. NH3 adsorption possess large adsorption energy that is suitable to be used as sensing material in gas device. And the physical adsorption model is determined through considering adsorption distance, adsorption energy, and Charge density difference (CDD) plot, moreover, the physical adsorption is profited to the application of gas sensor. Our theoretical results indicates that monolayer SiGe is a promising candidate for gas sensing applications.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"152 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75697356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245207
Min-bo Zhou, Han Zhang, Xin-Ping Zhang, W. Yue
With the increasing demand for low temperature reflow processes in electronic packaging, SnBi-based solders have been increasingly explored to replace partially SnAgCu solders (typically Sn3.0Ag0.5Cu, i.e., SAC305) in the board-level BGA packaging due to their features of low thermal effects on devices and PCBs. In order to verify whether the hybrid Cu/SnAgCu/SnBi/Cu joints, in which SnBi solder exhibits the significant phase segregation, are suitable for mobile electronic packaging, the fracture behavior of locally-melted hybrid Cu/SAC305/Sn58Bi/Cu joints under different loading rates ranging from 100 to 5000 μm/s were studied systematically. It is found that the shear strength of hybrid joints increases significantly with increasing loading rate. Meanwhile, due to different loading rate sensitivities of Sn58Bi solder and SAC305 solder, the deformation behavior, fracture position (path) and fracture mode of the hybrid Cu/SAC305/Sn58Bi/Cu joints are significantly different when subjected to shear stress with different loading rates.
{"title":"Shear strength and fracture behavior of locally-melted hybrid Cu/Sn3.0Ag0.5Cu/Sn58Bi/Cu joints under different loading rates","authors":"Min-bo Zhou, Han Zhang, Xin-Ping Zhang, W. Yue","doi":"10.1109/ICEPT47577.2019.245207","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245207","url":null,"abstract":"With the increasing demand for low temperature reflow processes in electronic packaging, SnBi-based solders have been increasingly explored to replace partially SnAgCu solders (typically Sn3.0Ag0.5Cu, i.e., SAC305) in the board-level BGA packaging due to their features of low thermal effects on devices and PCBs. In order to verify whether the hybrid Cu/SnAgCu/SnBi/Cu joints, in which SnBi solder exhibits the significant phase segregation, are suitable for mobile electronic packaging, the fracture behavior of locally-melted hybrid Cu/SAC305/Sn58Bi/Cu joints under different loading rates ranging from 100 to 5000 μm/s were studied systematically. It is found that the shear strength of hybrid joints increases significantly with increasing loading rate. Meanwhile, due to different loading rate sensitivities of Sn58Bi solder and SAC305 solder, the deformation behavior, fracture position (path) and fracture mode of the hybrid Cu/SAC305/Sn58Bi/Cu joints are significantly different when subjected to shear stress with different loading rates.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74184628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245328
Chunyan Lu, F. Huang, Mingliang L. Huang
With the development of flip-chip packaging technology in high powered light-emitting diode (LED), the size of bump which plays a vital role to maintain the reliability of interconnects continues to decrease. Au-30at.%Sn eutectic alloy is one of the most promising lead-free solders, which has been widely used in LED packaging, owing to its excellent mechanical property and thermal conductivity. In the present work, a relatively stable non-cyanide electroplating solution was obtained. The co-electrodeposited films with bright silver surface and fine crystal grains were obtained, when the peak current density was between 25 mA/cm2 and 30 mA/cm2. Chronopotentiometry analysis indicated that the irregular and coarsened particles appeared under a relatively low current density. The optimal co-electroplating temperature of Au-Sn alloy was between 30 °C and 40 °C, at which the co- electrodeposited film has a nearly eutectic composition with a bright silver surface and fine crystal grains. The cathodic polarization curve showed the effect of different plating temperature on the co-deposition Au-Sn alloy. When the plating temperature was between 20 °C and 60 °C, the coelectrodeposition of Au-Sn alloy were occurred at -797 mV.
{"title":"Effects of Electroplating Process Parameters on Properties of Co-electroplated Au-Sn alloy","authors":"Chunyan Lu, F. Huang, Mingliang L. Huang","doi":"10.1109/ICEPT47577.2019.245328","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245328","url":null,"abstract":"With the development of flip-chip packaging technology in high powered light-emitting diode (LED), the size of bump which plays a vital role to maintain the reliability of interconnects continues to decrease. Au-30at.%Sn eutectic alloy is one of the most promising lead-free solders, which has been widely used in LED packaging, owing to its excellent mechanical property and thermal conductivity. In the present work, a relatively stable non-cyanide electroplating solution was obtained. The co-electrodeposited films with bright silver surface and fine crystal grains were obtained, when the peak current density was between 25 mA/cm2 and 30 mA/cm2. Chronopotentiometry analysis indicated that the irregular and coarsened particles appeared under a relatively low current density. The optimal co-electroplating temperature of Au-Sn alloy was between 30 °C and 40 °C, at which the co- electrodeposited film has a nearly eutectic composition with a bright silver surface and fine crystal grains. The cathodic polarization curve showed the effect of different plating temperature on the co-deposition Au-Sn alloy. When the plating temperature was between 20 °C and 60 °C, the coelectrodeposition of Au-Sn alloy were occurred at -797 mV.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74233561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper addresses the stability and reliability of IGBT operation under vibration conditions. Firstly, the structure of the module is built by soildworks; secondly, the ANSYS finite element analysis software is used as a platform to perform random vibration analysis on the structure; finally, a reasonable fatigue life calculation model is constructed based on the Conffin-Manson equation and the cumulative damage rule of Minter’s, the fatigue life of the welded layer under random vibration load is calculated. Find out the difference in fatigue life of the weld layer between different structures and optimize the model. The result provides certain reference value and guiding significance for guiding the optimal design and reliability design of IGBT power module.
{"title":"Modal analysis of IGBT power devices based on ANSYS","authors":"Haojie Wang, Dongjing Liu, Yasong Fan, Yanchen Wu, Tieliang Qiao, D.G. Yang","doi":"10.1109/ICEPT47577.2019.245111","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245111","url":null,"abstract":"This paper addresses the stability and reliability of IGBT operation under vibration conditions. Firstly, the structure of the module is built by soildworks; secondly, the ANSYS finite element analysis software is used as a platform to perform random vibration analysis on the structure; finally, a reasonable fatigue life calculation model is constructed based on the Conffin-Manson equation and the cumulative damage rule of Minter’s, the fatigue life of the welded layer under random vibration load is calculated. Find out the difference in fatigue life of the weld layer between different structures and optimize the model. The result provides certain reference value and guiding significance for guiding the optimal design and reliability design of IGBT power module.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"396 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76474637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245234
Xinyao Lu, Weixiang Wang, Zhenpeng Su, Sheng Liu, Huai Zheng
Uniform angular color distribution is regarded as a key index of high-quality light-emitting diode(LED) devices. The angular color uniformity is decided by the coated phosphor layer in the LED packaging. In this study, we demonstrated a method of manipulating phosphor particle spatial distributions for the high ACU LED packaging. In the presented method, the laser irradiation was used to selectively and rapidly cure the phosphor gel. The particles in the uncured phosphor gel settled on its bottom with the action of the gravity. By this method, we realized a phosphor layer configuration in which a conformal particle layer was deposited on the LED chip surfaces and the particles were randomly and uniformly distributed into the gel located above the LED chip. Compared to the dispensing phosphor coating and simple settling coating, such a phosphor particle spatial distribution significantly enhance the ACU, and the enhancement reaches more than 51%.
{"title":"Phosphor particle spatial patterning for high angular color uniformity LED packaging through selective curing and settling","authors":"Xinyao Lu, Weixiang Wang, Zhenpeng Su, Sheng Liu, Huai Zheng","doi":"10.1109/ICEPT47577.2019.245234","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245234","url":null,"abstract":"Uniform angular color distribution is regarded as a key index of high-quality light-emitting diode(LED) devices. The angular color uniformity is decided by the coated phosphor layer in the LED packaging. In this study, we demonstrated a method of manipulating phosphor particle spatial distributions for the high ACU LED packaging. In the presented method, the laser irradiation was used to selectively and rapidly cure the phosphor gel. The particles in the uncured phosphor gel settled on its bottom with the action of the gravity. By this method, we realized a phosphor layer configuration in which a conformal particle layer was deposited on the LED chip surfaces and the particles were randomly and uniformly distributed into the gel located above the LED chip. Compared to the dispensing phosphor coating and simple settling coating, such a phosphor particle spatial distribution significantly enhance the ACU, and the enhancement reaches more than 51%.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"167 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77485755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245329
Tao Xu, Min-bo Zhou, Ze-Jun Zhang, Xing-Fei Zhao, Xin-Ping Zhang
In this study, Sn3.0Ag0.5Cu (SAC305) solder balls with various diameters were used to fabricate cross-scale SAC305/Cu joints (from micro-bump joints to flip chip-BGA and then to board level BGA joints). Four different reflow peak temperatures of 300, 250, 200 and 150 °C were adopted for step-reflow processes. The interfacial reactions, evolution of microstructures, interfacial intermetallic compound (IMC) growth and Cu6Sn5 grain morphology change in cross-scale SAC305/Cu joints were investigated systematically. The results show that the proportion of IMC in cross-scale SAC305/Cu joints increases with decrease of solder diameter. The IMC layer in small joints is thicker than that in large joints during step-reflow processes because small solder joints have sufficient supply of Cu atoms for growth of Cu6Sn5. During step-reflow processes, the thickness of interfacial IMC layer increases with increasing the number of reflow cycles in crossscale SAC305/Cu joints regardless of diameters of solder balls.
{"title":"Solder size effect on interfacial reaction and growth behavior of Cu–Sn intermetallic compounds in cross-scale Sn3.0Ag0.5Cu/Cu joints between stacking TSV chips during step-reflow processes","authors":"Tao Xu, Min-bo Zhou, Ze-Jun Zhang, Xing-Fei Zhao, Xin-Ping Zhang","doi":"10.1109/ICEPT47577.2019.245329","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245329","url":null,"abstract":"In this study, Sn3.0Ag0.5Cu (SAC305) solder balls with various diameters were used to fabricate cross-scale SAC305/Cu joints (from micro-bump joints to flip chip-BGA and then to board level BGA joints). Four different reflow peak temperatures of 300, 250, 200 and 150 °C were adopted for step-reflow processes. The interfacial reactions, evolution of microstructures, interfacial intermetallic compound (IMC) growth and Cu6Sn5 grain morphology change in cross-scale SAC305/Cu joints were investigated systematically. The results show that the proportion of IMC in cross-scale SAC305/Cu joints increases with decrease of solder diameter. The IMC layer in small joints is thicker than that in large joints during step-reflow processes because small solder joints have sufficient supply of Cu atoms for growth of Cu6Sn5. During step-reflow processes, the thickness of interfacial IMC layer increases with increasing the number of reflow cycles in crossscale SAC305/Cu joints regardless of diameters of solder balls.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81431105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245230
M. Song, V. Mathew, L. Li, Sonder Wang, M. C. Han, Y. Song, Allen M. Descartin
Cu wire is widely used in the electronics industry for wire bond material for IC packages due to lower cost compared to Au wire. IC package miniaturization and increasing connection density are resulting in new challenges in terms of reliability and long-term stability. Harsher environments in automotive electronics also lead to several reliability issues. Corrosion effects, especially at Al/Cu wire bond interfaces are the interaction result of factors such as temperature, moisture, and biased electrical driving force with halides as the corrosion initiator. The influence of Cl (chlorine) on the interfacial corrosion of wire bond contacts is well known. Very small amounts of chlorine can result in Cu/Al corrosion and cause electrical open failures in humidity related stresses (e.g., HAST, Autoclave, THB, etc.). However, the influence of fluorine (F) on Cl induced corrosion is not as well understood. This paper introduces a new failure mechanism: Cl- induced IMC corrosion. In this mechanism, not only the IMC and Al pad but also the Cu corrodes. To understand the corrosion mechanism, the paper presents the first step in an initial investigation with the goal to get knowledge about whether F is a contributing factor in the Cu/Al corrosion process. An experimental study was done using three different wafers (a special wafer fabrication process to artificially generate different level of F contamination on the Al pads). Fluorine contamination was characterized on the bonding pads by AES (Auger Electron Spectroscopy) then the wafers were assembled into packages and then tested using THB (Temperature Humidity Biased) stress. Final test after THB stress was the major response for the experiment. The result shows that the level of F contamination studied not sufficient to show the impact. Further study is needed for higher levels of fluorine contamination. However, fluorine contamination should still be well controlled and monitored in Cu wire bonded package because it may worsen the wire bond performance potentially impacting wire bond robustness against corrosion.
{"title":"A New Finding of Cu-Al IMC Corrosion and Investigation of Fluorine Contamination Influence on Cu-Al IMC Corrosion","authors":"M. Song, V. Mathew, L. Li, Sonder Wang, M. C. Han, Y. Song, Allen M. Descartin","doi":"10.1109/ICEPT47577.2019.245230","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245230","url":null,"abstract":"Cu wire is widely used in the electronics industry for wire bond material for IC packages due to lower cost compared to Au wire. IC package miniaturization and increasing connection density are resulting in new challenges in terms of reliability and long-term stability. Harsher environments in automotive electronics also lead to several reliability issues. Corrosion effects, especially at Al/Cu wire bond interfaces are the interaction result of factors such as temperature, moisture, and biased electrical driving force with halides as the corrosion initiator. The influence of Cl (chlorine) on the interfacial corrosion of wire bond contacts is well known. Very small amounts of chlorine can result in Cu/Al corrosion and cause electrical open failures in humidity related stresses (e.g., HAST, Autoclave, THB, etc.). However, the influence of fluorine (F) on Cl induced corrosion is not as well understood. This paper introduces a new failure mechanism: Cl- induced IMC corrosion. In this mechanism, not only the IMC and Al pad but also the Cu corrodes. To understand the corrosion mechanism, the paper presents the first step in an initial investigation with the goal to get knowledge about whether F is a contributing factor in the Cu/Al corrosion process. An experimental study was done using three different wafers (a special wafer fabrication process to artificially generate different level of F contamination on the Al pads). Fluorine contamination was characterized on the bonding pads by AES (Auger Electron Spectroscopy) then the wafers were assembled into packages and then tested using THB (Temperature Humidity Biased) stress. Final test after THB stress was the major response for the experiment. The result shows that the level of F contamination studied not sufficient to show the impact. Further study is needed for higher levels of fluorine contamination. However, fluorine contamination should still be well controlled and monitored in Cu wire bonded package because it may worsen the wire bond performance potentially impacting wire bond robustness against corrosion.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81742700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245343
Binhai Yu, Shunming Liang, Xinrui Ding, Yi Yang, Changkun Shao, Qiliang Zhao, Zongtao Li
Visible light communication (VLC) has attracted a lot of attentions. However, there are still some difficult issues need to be solved for practical applications, such as the small active area of the PD. The transmission distance and incident angle greatly affect the stability of VLC system. In this work, the influence of transmission distance, incident light angle and received optical power of receiver on VLC system has been investigated. In order to improve the performance of the receiver, series of hemispherical lenses for photodetector were analyzed. By fabricating suitable hemispherical lens, the signal to noise ratio (SNR) was measured under different condition, and the experiment results showed that the suitable hemispherical lens can well improve the communication performance of the VLC system.
{"title":"Performance Investigation on Hemispherical Lens used in Photodetector for Visible Light Communications","authors":"Binhai Yu, Shunming Liang, Xinrui Ding, Yi Yang, Changkun Shao, Qiliang Zhao, Zongtao Li","doi":"10.1109/ICEPT47577.2019.245343","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245343","url":null,"abstract":"Visible light communication (VLC) has attracted a lot of attentions. However, there are still some difficult issues need to be solved for practical applications, such as the small active area of the PD. The transmission distance and incident angle greatly affect the stability of VLC system. In this work, the influence of transmission distance, incident light angle and received optical power of receiver on VLC system has been investigated. In order to improve the performance of the receiver, series of hemispherical lenses for photodetector were analyzed. By fabricating suitable hemispherical lens, the signal to noise ratio (SNR) was measured under different condition, and the experiment results showed that the suitable hemispherical lens can well improve the communication performance of the VLC system.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"101 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77041036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245106
J. Bao, Yuan Xu, R. Ning, L. Hou, Zhenhai Chen, Wenyi Xu, Bin Zhou
With the development of LED chip and packaging to the high power direction, improving the internal structure of the tube core and packaging, to solve the problem of heat dissipation, has become the mainstream direction of LED research. In this paper, a basic structure with sapphire epitaxial growth GaN flip-chip, film direct bonded copper substrate and array package was employed. Two-dimensional material graphene-based film with high thermal conductivity was applied into encapsulation structure of power LED to conduct transverse thermal diffusion of local hot spots, which would change the heat conduction path and improve the heat dissipation efficiency. Combined with the thermal resistance network of the power LED packaging structure and the simulation results of application in different ways of graphene-based film, the influence mechanism of graphene on the heat conduction of power devices was analyzed. It showed that the heat dissipation application of graphene in power LED packaging should be as close as possible to the GaN chip hot spots.
{"title":"Thermal design and analysis of power LED packaging based on graphene","authors":"J. Bao, Yuan Xu, R. Ning, L. Hou, Zhenhai Chen, Wenyi Xu, Bin Zhou","doi":"10.1109/ICEPT47577.2019.245106","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245106","url":null,"abstract":"With the development of LED chip and packaging to the high power direction, improving the internal structure of the tube core and packaging, to solve the problem of heat dissipation, has become the mainstream direction of LED research. In this paper, a basic structure with sapphire epitaxial growth GaN flip-chip, film direct bonded copper substrate and array package was employed. Two-dimensional material graphene-based film with high thermal conductivity was applied into encapsulation structure of power LED to conduct transverse thermal diffusion of local hot spots, which would change the heat conduction path and improve the heat dissipation efficiency. Combined with the thermal resistance network of the power LED packaging structure and the simulation results of application in different ways of graphene-based film, the influence mechanism of graphene on the heat conduction of power devices was analyzed. It showed that the heat dissipation application of graphene in power LED packaging should be as close as possible to the GaN chip hot spots.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80873760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245813
Hsin-En Chen, Penny Yang, Ian Hu, M. Shih, D. Tarng, C. Hung
The next-generation 5G mobile network causes handheld device will be linked to various things in life, such as wearable devices, electric vehicles, GPS, AR/VR, smart home system, IOT, etc. In the trend of lighter, thinner and more functions, it also suffers from several issues like high power consumption and overheating, and high performance and low power consumption can meet the requirement. In order to meet these expectations, IC need to design low or ultra-low current (nA~μA), low clock speed and command simplification, etc., however, for these milliseconds or microseconds signals, more complicated operation modes and rapid switching frequency, the traditional temperature measurement cannot accurately measure the instantaneous temperature variations. If the temperature rising is evaluated by transient thermal simulation, the correct model size and material characteristics such as density and specific heat are required, but it’s difficult to find the correct material information for multiple material, for example: plating material trace on silicon die, substrate and PCC, etc. Therefore, temperature variations in transient simulation cannot be correctly analyzed.This paper evaluates the difference of thermal resistance measurement between JEDEC traditional measurement method and TDIM (Transient Dual Interface Measurement) in QFN and HFCBGA, and compares the difference and causes of the results under different measurement environments. In addition, TDIM can evaluate the thermal resistance of each structural layer and also measure the instantaneous variations in temperature and thermal resistance. Finally, the transient thermal model can be provided after correction with simulation software to ensure that the transient simulation result is better and more accurate. The results show that the difference between TDIM and traditional method isn’t significant when the heating power is smaller; the larger heating power cause the difference is increases significantly to more than 10%. Through the process of structure function can find out that defects in the heat path may cause large thermal resistance. The corrected thermal model can be closer to the real measurement result in the transient analysis, and also significant difference in system level thermal simulation.
{"title":"Transient Thermal Resistance Analysis for IC Packages","authors":"Hsin-En Chen, Penny Yang, Ian Hu, M. Shih, D. Tarng, C. Hung","doi":"10.1109/ICEPT47577.2019.245813","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245813","url":null,"abstract":"The next-generation 5G mobile network causes handheld device will be linked to various things in life, such as wearable devices, electric vehicles, GPS, AR/VR, smart home system, IOT, etc. In the trend of lighter, thinner and more functions, it also suffers from several issues like high power consumption and overheating, and high performance and low power consumption can meet the requirement. In order to meet these expectations, IC need to design low or ultra-low current (nA~μA), low clock speed and command simplification, etc., however, for these milliseconds or microseconds signals, more complicated operation modes and rapid switching frequency, the traditional temperature measurement cannot accurately measure the instantaneous temperature variations. If the temperature rising is evaluated by transient thermal simulation, the correct model size and material characteristics such as density and specific heat are required, but it’s difficult to find the correct material information for multiple material, for example: plating material trace on silicon die, substrate and PCC, etc. Therefore, temperature variations in transient simulation cannot be correctly analyzed.This paper evaluates the difference of thermal resistance measurement between JEDEC traditional measurement method and TDIM (Transient Dual Interface Measurement) in QFN and HFCBGA, and compares the difference and causes of the results under different measurement environments. In addition, TDIM can evaluate the thermal resistance of each structural layer and also measure the instantaneous variations in temperature and thermal resistance. Finally, the transient thermal model can be provided after correction with simulation software to ensure that the transient simulation result is better and more accurate. The results show that the difference between TDIM and traditional method isn’t significant when the heating power is smaller; the larger heating power cause the difference is increases significantly to more than 10%. Through the process of structure function can find out that defects in the heat path may cause large thermal resistance. The corrected thermal model can be closer to the real measurement result in the transient analysis, and also significant difference in system level thermal simulation.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"29 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81219022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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