M. Cohn, Kaosio Saechao, Michael Whitlock, Daniel Brenman, Wallace T. Tang, R. Proie
{"title":"RF MEMS switches for Wide I/O data bus applications","authors":"M. Cohn, Kaosio Saechao, Michael Whitlock, Daniel Brenman, Wallace T. Tang, R. Proie","doi":"10.1109/TEST.2013.6651889","DOIUrl":null,"url":null,"abstract":"Wide I/O poses serious challenges due to the requisite high density of electronics and relays near the DUT, as well as high bandwidth. A 2×2mm MEMS switch has been demonstrated, offering >80% footprint reduction relative to a typical TO-can electromagnetic relay. A further benefit of its small size, the MEMS relay is able to operate up to Ka-band (40 GHz) with hot switch capability and repeatability of <;±50mΩ. To our knowledge, our latest SPDT device holds the current record in power handling for MEMS devices of 24 W at 10 million cycles.","PeriodicalId":6379,"journal":{"name":"2013 IEEE International Test Conference (ITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Test Conference (ITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2013.6651889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Wide I/O poses serious challenges due to the requisite high density of electronics and relays near the DUT, as well as high bandwidth. A 2×2mm MEMS switch has been demonstrated, offering >80% footprint reduction relative to a typical TO-can electromagnetic relay. A further benefit of its small size, the MEMS relay is able to operate up to Ka-band (40 GHz) with hot switch capability and repeatability of <;±50mΩ. To our knowledge, our latest SPDT device holds the current record in power handling for MEMS devices of 24 W at 10 million cycles.
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