A Low-Power 16-Channel SiPM Readout Front-end with a Shared SAR ADC in 180 nm CMOS

Yuxuan Tang, Runxi Zhang, Jinghong Chen
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引用次数: 4

Abstract

This paper reports a low-power and high-timing resolution silicon photomultiplier (SiPM) readout front-end in a 180 nm CMOS technology. A low-input impedance current buffer employing current feedback is developed to achieve direct charge integration without the use of power-hungry charge-sensitive amplifiers (CSAs). A customized 10-bit SAR ADC is designed for energy digitization. The ADC is shared among 16 readout channels to reduce the chip area and improve power efficiency. The SAR ADC reuses the charge integration capacitor in each readout channel as the ADC sampling capacitor to further lower the power consumption. To reduce the SiPM noise-induced timing measurement error, an on-chip high-pass filter (HPF) based fast pulse generation approach is developed to sharpen the long-tailed SiPM current pulses into fast pulses. With a 1.8 V power supply, the SAR ADC consumes 743 µW at 16 MS/s, and achieves a SNDR of 56.48 dB and a SFDR of 62.53 dB. The on-chip fast pulse generation brings a 35 ps improvement in timing resolution without increasing the number of I/O pin counts. Including the front-end current buffer, current mirrors, charge integrator and the shared ADC, each channel of the readout system consumes 3.8 mW of power with a conversion period of 1 µs.
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低功耗16通道SiPM读出前端与共享SAR ADC在180纳米CMOS
本文报道了一种采用180nm CMOS技术的低功耗、高时序分辨率硅光电倍增管读出前端。开发了一种采用电流反馈的低输入阻抗电流缓冲器,以实现直接电荷集成,而无需使用耗电的电荷敏感放大器(csa)。针对能源数字化,设计了定制的10位SAR ADC。ADC在16个读出通道之间共享,以减少芯片面积并提高功率效率。SAR ADC重用每个读出通道中的电荷积分电容作为ADC采样电容,以进一步降低功耗。为了减小SiPM噪声引起的定时测量误差,提出了一种基于片上高通滤波器(HPF)的快速脉冲产生方法,将SiPM长尾电流脉冲锐化为快速脉冲。在1.8 V电源下,SAR ADC在16 MS/s时功耗为743µW, SNDR为56.48 dB, SFDR为62.53 dB。片上快速脉冲产生带来了35 ps的时序分辨率提高,而不增加I/O引脚计数的数量。包括前端电流缓冲器、电流镜、电荷积分器和共享ADC在内,读出系统的每个通道功耗为3.8 mW,转换周期为1µs。
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