{"title":"A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation","authors":"N. Tajima","doi":"10.7567/SSDM.2017.PS-14-11","DOIUrl":null,"url":null,"abstract":"We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"84 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.PS-14-11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.
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