Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim
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引用次数: 7
Abstract
We present quantum transport simulation results of stacked silicon nanosheet (SiNS) nFETs. Our simulations are based on the non-equilibrium Green’s function (NEGF) method which is capable of dealing with all major physical effects necessary for steady-state electron transport in the complex-shaped devices. In order to help find optimal device design many split simulations for various geometry and process conditions were performed as a demonstration.
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