Impact of Increased Quantum Confinement on Gate Capacitance and Threshold Voltage of p Channel Junctionless Transistor

Abstract

In this work, by employing self-consistent solver we study Capacitance-Voltage (C-V) characteristics and the threshold voltage variation of p-type Rectangular Gate Junctionless Field Effect Transistor (RG-JLFET) and Double Gate Junctionless Field Effect Transistor (DG-JLFET). The selfconsistent solver solves Schrodinger-Poisson equations with appropriate boundary conditions and takes wave function penetration and other quantum mechanical effects into account. We compare the effect of device parameter variation (such as channel thickness, oxide thickness and doping concentration) on threshold voltage control for both transistor structures. Physical explanations of the found results are also provided.