Compact high temperature package with smart size optimized gate drive unit for assembling the Dual-ICT

Abstract

The focus of this paper is the presentation of an innovative realization of a compact package and a small-sized gate drive unit (GDU) for a dual gate commutated thyristor (Dual-GCT). The package includes, like in an internally commutated thyristor (ICT) [1], the turn-off but additionally the turn-on unit to achieve fast turn-on (1000 A/μs) and -off (320 A/μs) switching. The new gate drive design is significantly smaller (reduction of 85 % compared to a standard GDU) and less complex. A temperature-resistant (up to 125°C) package for a Dual-GCT is achieved.