H. Takenaka, M. Shinohara, T. Uchida, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
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引用次数: 1
Abstract
High-frequency limit of Si single-electron transistor (SET) is investigated. Since the SETs inevitably have tunnel barriers, the operation speed is thought to be low. To measure the high frequency properties of SETs, we employed their special rectification characteristics, which occurred due to the asymmetry of Coulomb diamond when alternating current voltage was applied to the drain terminal. By the use of the effect, we evaluated the high-frequency properties of Si SETs.
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