{"title":"Application of a statistical design methodology to low voltage analog MOS integrated circuits","authors":"T. Tarim, M. Ismail","doi":"10.1109/ISCAS.2000.858702","DOIUrl":null,"url":null,"abstract":"The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.","PeriodicalId":6422,"journal":{"name":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","volume":"53 1","pages":"117-120 vol.4"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2000.858702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.
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