Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-01-27 DOI:10.33180/INFMIDEM2020.401
Islombek Mamatov
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引用次数: 1

Abstract

Carbon nanotube field effect transistor (CNTFET) is strong candidate to replace existing silicon based transistors. The ballistic transport of electrons in CNTFET channel leads to ultra-low power or high frequency devices. Since, lot of digital applications of CNCTFET were presented.  However, much less work was done in analog applications of CNTFETs. This paper presents analog applications of CNTFET and CNTFET implementation of voltage differencing transconductance amplifier (VDTA). The CNTFET VDTA based filters and oscillators were proposed. The VDTA circuits are   resistorless and  can be tuned electronically only  by changing transconductance.  The proposed CNTFET VDTA  show power consumption of 15000 times less than compared to 0.18um TSMC technology and significant reduction in chip area. All simulations were performed using HSPICE and  MATLAB simulation tools.
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超低功耗跨导压差放大器、32纳米碳纳米管场效应晶体管通用滤波器和振荡器
碳纳米管场效应晶体管(CNTFET)是取代现有硅基晶体管的有力候选器件。电子在CNTFET通道中的弹道输运导致超低功率或高频器件的产生。因此,介绍了CNCTFET的许多数字化应用。然而,在cntfet的模拟应用中所做的工作要少得多。本文介绍了CNTFET的模拟应用和CNTFET在差分跨导放大器(VDTA)中的实现。提出了基于CNTFET VDTA的滤波器和振荡器。VDTA电路是无电阻的,可以通过改变跨导来进行电子调谐。提出的CNTFET VDTA显示功耗比0.18um台积电技术低15000倍,芯片面积显着减少。所有仿真均使用HSPICE和MATLAB仿真工具进行。
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来源期刊
CiteScore
1.80
自引率
0.00%
发文量
10
审稿时长
>12 weeks
期刊介绍: Informacije MIDEM publishes original research papers in the fields of microelectronics, electronic components and materials. Review papers are published upon invitation only. Scientific novelty and potential interest for a wider spectrum of readers is desired. Authors are encouraged to provide as much detail as possible for others to be able to replicate their results. Therefore, there is no page limit, provided that the text is concise and comprehensive, and any data that does not fit within a classical manuscript can be added as supplementary material. Topics of interest include: Microelectronics, Semiconductor devices, Nanotechnology, Electronic circuits and devices, Electronic sensors and actuators, Microelectromechanical systems (MEMS), Medical electronics, Bioelectronics, Power electronics, Embedded system electronics, System control electronics, Signal processing, Microwave and millimetre-wave techniques, Wireless and optical communications, Antenna technology, Optoelectronics, Photovoltaics, Ceramic materials for electronic devices, Thick and thin film materials for electronic devices.
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