{"title":"Thin nickel films growth using plasma enhanced atomic layer deposition from η3-2-methylallyl N, N'-diisopropylacetamidinate nickel(II)","authors":"Jiro Yokota, Clement Lansalot, Changhee Ko","doi":"10.1109/IITC.2013.6615573","DOIUrl":null,"url":null,"abstract":"Plasma enhanced atomic layer deposition (PEALD) using the novel η<sup>3</sup>-2-methylallyl N,N'-diisopropylacetamidinate nickel(II) precursor has been investigated. NH<sub>3</sub> has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturations were observed at 200°C and 300 °C, with a deposition rate of 1.0 Å/cycle and 1.2Å/cycle respectively. No incubation time was observed with linear film growth at 300°C. Deposition on SiO<sub>2</sub> patterned wafer was performed and SEM image analysis showed good step coverage of close to 100%. H<sub>2</sub> anneal post treatment allowed to obtain very pure nickel film and resistivities value down to 9μΩ·cm, close to the resistivity value of bulk nickel (5-10μΩ·cm) [1].","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Plasma enhanced atomic layer deposition (PEALD) using the novel η3-2-methylallyl N,N'-diisopropylacetamidinate nickel(II) precursor has been investigated. NH3 has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturations were observed at 200°C and 300 °C, with a deposition rate of 1.0 Å/cycle and 1.2Å/cycle respectively. No incubation time was observed with linear film growth at 300°C. Deposition on SiO2 patterned wafer was performed and SEM image analysis showed good step coverage of close to 100%. H2 anneal post treatment allowed to obtain very pure nickel film and resistivities value down to 9μΩ·cm, close to the resistivity value of bulk nickel (5-10μΩ·cm) [1].
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