S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee
{"title":"Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET","authors":"S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee","doi":"10.7567/ssdm.2017.ps-1-05","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"411 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2017.ps-1-05","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
