{"title":"An 890 mW stacked power amplifier using SiGe HBTs for X-band multifunctional chips","authors":"Chao Liu, Qiang Li, Yihu Li, Xiang Li, Haitao Liu, Y. Xiong","doi":"10.1109/ESSCIRC.2015.7313830","DOIUrl":null,"url":null,"abstract":"This paper presents a stacked power amplifier (PA) for X-band multifunctional chips using 0.13-μm SiGe HBTs. To achieve high output power, two 5-stacked PAs with optimum inter-stage matching networks are combined with Wilkinson power combiners. Furthermore, a 3-stacked amplifier is used as the driving amplifier to increase the gain of the whole PA. During on-chip measurements, the X-band stacked PA achieves peak output power of 890 mW and maximum power added efficiency (PAE) of 17.8 %. The chip area is 1.9 × 1.4 mm2 including the testing pads. To the authors' knowledge, our proposed PA achieves the highest output power at X-band with a silicon-based technology.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2015.7313830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
This paper presents a stacked power amplifier (PA) for X-band multifunctional chips using 0.13-μm SiGe HBTs. To achieve high output power, two 5-stacked PAs with optimum inter-stage matching networks are combined with Wilkinson power combiners. Furthermore, a 3-stacked amplifier is used as the driving amplifier to increase the gain of the whole PA. During on-chip measurements, the X-band stacked PA achieves peak output power of 890 mW and maximum power added efficiency (PAE) of 17.8 %. The chip area is 1.9 × 1.4 mm2 including the testing pads. To the authors' knowledge, our proposed PA achieves the highest output power at X-band with a silicon-based technology.
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