Carbon nanotube interconnects: implications for performance, power dissipation and thermal management

N. Srivastava, R. Joshi, K. Banerjee
{"title":"Carbon nanotube interconnects: implications for performance, power dissipation and thermal management","authors":"N. Srivastava, R. Joshi, K. Banerjee","doi":"10.1109/IEDM.2005.1609320","DOIUrl":null,"url":null,"abstract":"This paper presents a comprehensive evaluation of carbon nanotube bundle interconnects from all aspects critical to VLSI circuits - performance, power dissipation and reliability - while taking into account practical limitations of the technology. A novel delay model for CNT bundle interconnects has been developed, using which it is shown that CNT bundles can significantly improve the performance of long global interconnects with minimal additional power dissipation (for maximum metallic CNT density). While it is well known that CNT bundle interconnects can carry much higher current densities than copper, their impact on back-end thermal management and interconnect temperature rise is presented here for the first time. It is shown that the use of CNT bundle vias integrated with copper interconnects can improve copper interconnect lifetime by two orders of magnitude and also reduce optimal global interconnect delay by as much as 30%","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"9 1","pages":"249-252"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"87","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 87

Abstract

This paper presents a comprehensive evaluation of carbon nanotube bundle interconnects from all aspects critical to VLSI circuits - performance, power dissipation and reliability - while taking into account practical limitations of the technology. A novel delay model for CNT bundle interconnects has been developed, using which it is shown that CNT bundles can significantly improve the performance of long global interconnects with minimal additional power dissipation (for maximum metallic CNT density). While it is well known that CNT bundle interconnects can carry much higher current densities than copper, their impact on back-end thermal management and interconnect temperature rise is presented here for the first time. It is shown that the use of CNT bundle vias integrated with copper interconnects can improve copper interconnect lifetime by two orders of magnitude and also reduce optimal global interconnect delay by as much as 30%
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碳纳米管互连:对性能、功耗和热管理的影响
本文从对VLSI电路至关重要的各个方面(性能、功耗和可靠性)对碳纳米管束互连进行了全面评估,同时考虑到该技术的实际局限性。建立了一种新的碳纳米管束互连的延迟模型,利用该模型表明,碳纳米管束可以显著提高长全局互连的性能,并且具有最小的额外功耗(对于最大的金属碳纳米管密度)。虽然众所周知,碳纳米管束互连可以携带比铜高得多的电流密度,但它们对后端热管理和互连温升的影响在这里首次提出。研究表明,使用集成铜互连的碳纳米管束通孔可以将铜互连寿命提高两个数量级,并将最佳全局互连延迟降低多达30%
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