Siyang Liu, Weifeng Sun, Weijun Wan, Qinsong Qian, Hu Sun
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引用次数: 3
Abstract
Hot-carrier-induced degradation in the p-type double diffusion drain MOS (p-DDDMOS) transistor with different p-drift dosage is investigated. Basing on the experimental data and T-CAD simulations, hot-electron injection into the oxide of the p-drift region near the channel has been found, leading to the on-resistance (Ron) decrease, however, no hot-carrier degradation is observed in the channel region. The experimental results also show that higher p-drift dosage will result in much more serious degradation due to much more hot electron injection and trapping.
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