Electron beam induced current characterization of dark line defects in failed and degraded high power quantum well laser diodes

Abstract

We investigate the dependence of electron beam induced current (EBIC) contrast from dark-line defects (DLDs) on temperature and voltage bias in failed and degraded high power quantum well laser diodes (HPLDs). Voltage bias induced contrast variations in EBIC allowed us to make the first observation of what may be the DLD initiation point in a degraded, but not failed, HPLD. Wavelet analysis of temperature and voltage dependent EBIC contrast reveals three distinct regions with different defect properties within the DLD. These results can be correlated to destructive physical analysis and other defect characterization techniques, such as cathodoluminescence and deep-level transient spectroscopy, to provide insight into defect types and failure mechanisms in these devices.