A low power, low noise, ultra-wide dynamic range CMOS imager with pixel-parallel A/D conversion

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103) Pub Date : 2000-06-15 DOI:10.1109/VLSIC.2000.852841

L.G. Mellrath

引用次数: 5

Abstract

A CMOS image sensor with pixel-parallel A/D conversion fabricated with different array sizes and photodiode types in a 3-metal 0.5 /spl mu/m process is presented. Nominal power dissipation is 40 nW per pixel at V/sub DD/=3.3 V. A/D conversion results from sampling a free-running photocurrent-controlled oscillator to give a first-order /spl Sigma/-/spl Delta/ sequence. The sensor displays dynamic range capability of greater than 150000:1 and exhibits fixed pattern noise correctable to within 0.1% of signal.

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一种低功耗、低噪声、超宽动态范围的像素并行A/D转换CMOS成像仪

提出了一种采用不同阵列尺寸和不同光电二极管类型的3金属0.5 /spl μ m工艺制作的像素并行A/D转换CMOS图像传感器。在V/sub DD/=3.3 V时，标称功耗为每像素40 nW。A/D转换通过对自由运行的光电流控制振荡器进行采样得到一阶/spl Sigma/-/spl Delta/序列。该传感器显示大于15000:1的动态范围能力，并显示固定模式噪声，可校正到信号的0.1%以内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)

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