D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang
{"title":"Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices","authors":"D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang","doi":"10.1109/EDSSC.2011.6117721","DOIUrl":null,"url":null,"abstract":"Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"329 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.
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